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 HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 1/5
HM772
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HM772 is designed for use in output stage of amplifier, voltage regulator, DC-DC converter and driver.
Absolute Maximum Ratings
SOT-89
* Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ........................................................................... 0.5 W (Note1) Total Power Dissipation (Ta=25C) ............................................................................... 2 W (Note2) Total Power Dissipation (Tc=25C)............................................................................... 1 W (Note1) Total Power Dissipation (Tc=25C) ............................................................................... 4 W (Note2) * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage ..................................................................................... -30 V VEBO Emitter to Base Voltage ............................................................................................. -5 V IC Collector Current (continuous) ......................................................................................... -3 A IC Collector Current (pulse).......................................................................................... -7 A (Note3)
Thermal Characteristic
Characteristic Thermal Resistance, junction to ambient (Note1) Thermal Resistance, junction to ambient (Note2) Thermal Resistance, junction to case (Note1) Thermal Resistance, junction to case (Note2)
Note1: When tested in free air condition, without heat sinking. Note2: When mounted on a 40X40X1mm ceramic board. Note3: Single pulse PW=1ms
Symbol Rja Rja Rjc Rjc
Max. 250 62.5 125 31.25
Unit
o o
C/W C/W o C/W o C/W
HM772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V uA uA V V
Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 2/5
Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-100mA, f=100MHz VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
MHz pF
Classification Of hFE2
Rank Range Q 100-200 P 160-320 E 250-500
HM772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000 125 C
o
Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 3/5
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=5IB
75 C
o
25 C
o
Saturation Voltage (mV)
1000
o
75 C 100 125 C 10
o
hFE
100
hFE @ VCE=2V
25 C
o
10 1 10 100 1000 10000
1 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
1000 VCE(s at) @ IC=10IB 1000
Saturation Voltage & Collector Current
VCE(s at) @ IC=20IB
Saturation Voltage (mV)
Saturation Voltage (mV)
100
75 C
o
100 125 C
o
75 C
o
25 C 125 C
o
o
25 C
o
10 1 10 100 1000 10000
10 1 10 100 1000 10000
Collector Current-IC (mA)
Collector Current-IC (mA)
Saturation Voltage & Collector Current
10000 VCE(sat) @ IC=40IB 10000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
1000
Saturation Voltage (mV)
75 C 1000 25 C
o
o
125 C 100
o
75 C
o
125 C 25 C 10 1 10 100 1000 10000 100 1 10 100 1000 10000
o
o
VBE(sat) @ IC=10IB
Collector Current-IC (mA)
Collector Current-IC (mA)
HM772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 4/5
Capacitance & Reverse-Biased Voltage
1000
1000
Cutoff Frequency & Collector Current
Cutoff Frequency (MHz).. .
Capacitance (pF)
100
100
VCE=5V
Cob 10
10
1 0.1 1 10 100
1 1 10 100 1000
Reverse-Biased Voltage (V)
Collector Current (mA)
Power Derating
1.6 1.4
10000
Safe Operating Area
Pd(W), Power Dissipation
Collector Current-IC (mA)
1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 225 250
1000 PT=1ms PT=100ms 100 PT=1s
10
1 1 10 100
Ta (C), Ambient Temperature
Forward Biased Voltage-VCE (V)
HM772
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-89 Dimension
Marking:
Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 5/5
C
H
Date Code 772 Laser Marking HM
B 1 E F G A 2 3
D
Style: Pin 1.Base 2.Collector 3.Emitter
I
3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M
*: Typical
DIM A B C D E
Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.0141 0.0201
Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51
DIM F G H I
Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161
Millimeters Min. Max. 1.48 1.52 2.96 3.04 1.40 1.60 0.35 0.41
Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996.
2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
HM772
HSMC Product Specification


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