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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 1/5 HM772 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM772 is designed for use in output stage of amplifier, voltage regulator, DC-DC converter and driver. Absolute Maximum Ratings SOT-89 * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) ........................................................................... 0.5 W (Note1) Total Power Dissipation (Ta=25C) ............................................................................... 2 W (Note2) Total Power Dissipation (Tc=25C)............................................................................... 1 W (Note1) Total Power Dissipation (Tc=25C) ............................................................................... 4 W (Note2) * Maximum Voltages and Currents (Ta=25C) VCBO Collector to Base Voltage ........................................................................................ -40 V VCEO Collector to Emitter Voltage ..................................................................................... -30 V VEBO Emitter to Base Voltage ............................................................................................. -5 V IC Collector Current (continuous) ......................................................................................... -3 A IC Collector Current (pulse).......................................................................................... -7 A (Note3) Thermal Characteristic Characteristic Thermal Resistance, junction to ambient (Note1) Thermal Resistance, junction to ambient (Note2) Thermal Resistance, junction to case (Note1) Thermal Resistance, junction to case (Note2) Note1: When tested in free air condition, without heat sinking. Note2: When mounted on a 40X40X1mm ceramic board. Note3: Single pulse PW=1ms Symbol Rja Rja Rjc Rjc Max. 250 62.5 125 31.25 Unit o o C/W C/W o C/W o C/W HM772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE1 *hFE2 fT Cob Min. -40 -30 -5 30 100 Typ. -0.3 -1 160 80 55 Max. -1 -1 -0.5 -2 500 Unit V V V uA uA V V Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 2/5 Test Conditions IC=-100uA IC=-1mA IE=-10uA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A VCE=-2V, IC=-20mA VCE=-2V, IC=-1A VCE=-5V, IC=-100mA, f=100MHz VCB=-10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification Of hFE2 Rank Range Q 100-200 P 160-320 E 250-500 HM772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C o Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 3/5 Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=5IB 75 C o 25 C o Saturation Voltage (mV) 1000 o 75 C 100 125 C 10 o hFE 100 hFE @ VCE=2V 25 C o 10 1 10 100 1000 10000 1 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 VCE(s at) @ IC=10IB 1000 Saturation Voltage & Collector Current VCE(s at) @ IC=20IB Saturation Voltage (mV) Saturation Voltage (mV) 100 75 C o 100 125 C o 75 C o 25 C 125 C o o 25 C o 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 10000 VCE(sat) @ IC=40IB 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 Saturation Voltage (mV) 75 C 1000 25 C o o 125 C 100 o 75 C o 125 C 25 C 10 1 10 100 1000 10000 100 1 10 100 1000 10000 o o VBE(sat) @ IC=10IB Collector Current-IC (mA) Collector Current-IC (mA) HM772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 4/5 Capacitance & Reverse-Biased Voltage 1000 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz).. . Capacitance (pF) 100 100 VCE=5V Cob 10 10 1 0.1 1 10 100 1 1 10 100 1000 Reverse-Biased Voltage (V) Collector Current (mA) Power Derating 1.6 1.4 10000 Safe Operating Area Pd(W), Power Dissipation Collector Current-IC (mA) 1.2 1 0.8 0.6 0.4 0.2 0 0 25 50 75 100 125 150 175 200 225 250 1000 PT=1ms PT=100ms 100 PT=1s 10 1 1 10 100 Ta (C), Ambient Temperature Forward Biased Voltage-VCE (V) HM772 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-89 Dimension Marking: Spec. No. : HE9515 Issued Date : 1997.06.05 Revised Date : 2003.01.10 Page No. : 5/5 C H Date Code 772 Laser Marking HM B 1 E F G A 2 3 D Style: Pin 1.Base 2.Collector 3.Emitter I 3-Lead SOT-89 Plastic Surface Mounted Package HSMC Package Code: M *: Typical DIM A B C D E Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.0141 0.0201 Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51 DIM F G H I Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161 Millimeters Min. Max. 1.48 1.52 2.96 3.04 1.40 1.60 0.35 0.41 Notes: 1.Dimension and tolerance based on our Spec. dated May. 05,1996. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HM772 HSMC Product Specification |
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